Micron Announces the New DDR5-9200 — A Revolution in DRAM with EUV Lithography

Micron Technology has introduced its latest DDR5 chip, produced using the 1γ process with EUV lithography — a first for the company. The new 16‐gigabit (2 GB) DRAM achieves data transfer speeds of up to 9200 MT/s at a standard voltage of 1.1 V, significantly surpassing the baseline requirements of modern standards.

Not only does the new product offer a higher clock speed, but it also boasts improved energy efficiency. Compared to its predecessor built on the 1β process, the new chip consumes 20% less power and provides 30% higher bit density, potentially lowering production costs when optimal yields are achieved. Although 9200 MT/s goes beyond typical DDR5 specifications, Micron assures that the chip fully complies with JEDEC standards, paving the way for compatibility with future processors.

At this stage, the company is shipping samples of the new memory to select partners for comprehensive testing. Qualification tests are expected to be completed by the end of the quarter, with mass production slated for mid-2025. The 1γ process, which debuts EUV lithography in production, combines traditional multi-pattern DUV techniques with the latest innovations such as high-k metal gates and an improved back-end-of-line (BEOL) interconnect architecture.

Micron isn’t stopping here — the company plans to further leverage the 1γ process in developing new products, including solutions for graphics cards (GDDR7) and mobile devices (LPDDR5X with speeds up to 9600 MT/s). This strategic move will enable Micron to strengthen its position in the memory market by offering innovative solutions for both high-performance systems and energy-efficient mobile devices.